PART |
Description |
Maker |
NTD6600N NTD6600N-1 NTD6600N-1G NTD6600NT4 NTD6600 |
Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 12 A, 100 V, 0.146 ohm, N-CHANNEL, Si, POWER, MOSFET
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ON Semiconductor
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SPM4M024-100 SPC8M075-006 SPC8M045-010 SPC8M030-02 |
6 A, 1000 V, 2 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 130 A, 60 V, 0.006 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 120 A, 300 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 40 A, 600 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 350 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 45 A, 100 V, 0.03 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 300 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
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Sensitron Semiconductor http://
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IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 60 V, 0.023 ohm, N-CHANNE 81 A, 60 V, 0.012 ohm, N-CHANNE 27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. VISHAY INTERTECHNOLOGY INC
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PPF5210M |
P Channel MOSFET; Package: TO-254; ID (A): 19; RDS(on) (Ohms): 0.07; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 30 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
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PSMN9R5-100PS |
N-channel 100 V 9.6 m standard level MOSFET in T0220 89 A, 100 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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NXP Semiconductors N.V.
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2SJ289JFTD 2SJ189-TL 2SK1839JJTL |
0.5 A, 100 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET PCP, SC-62, 3 PIN 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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DOMINANT Opto Technologies Sdn. Bhd.
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PPF75N10N |
N Channel MOSFET; Package: TO-258; ID (A): 50; RDS(on) (Ohms): 0.025; PD (W): 300; BVDSS (V): 100; Rq: 0.42; 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
|
Microsemi, Corp.
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IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
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VMO40-05P1 VMO60-05F VMO650-01F |
41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET ECOPAC-4 High dv/dt, Low-trr, HDMOS-TM Family 60 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AA 690 A, 100 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET
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IXYS, Corp.
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STB24NF1006 STP24NF10 B24NF10 P24NF10 STB24NF10 |
26 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET
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STMICROELECTRONICS[STMicroelectronics]
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